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氧化铈和氧化钪掺杂对氧化锆材料中点缺陷的影响
陶景超
作者单位
陶景超 上海交通大学 材料科学与工程学院, 上海 200240 
摘要:
介绍了两种稀土元素掺杂的氧化锆(ZrO2)材料:氧化铈(CeO2)掺杂ZrO2和氧化钪(Sc2O3)掺杂ZrO2.CeO2掺杂ZrO2材料的研究重点是温度和氧分压对其氧空位形成的影响,以及由此带来的其热力学参数的变化.Sc2O3掺杂ZrO2材料的研究重点在ZrO2的掺杂含量对其氧空位数量的影响,以及氧空位作为离子导通的载体在晶体和晶界上的变化对材料导电性能的作用.
关键词:  氧化锆  点缺陷  氧空位
DOI:10.3969/J.ISSN.1000-5137.2017.06.008
分类号:O611.62
基金项目:
Influence of doping of ceria and scandia on the point defects of zirconia based material
Tao Jingchao
Abstract:
The advanced properties of rare-earth oxide doped zirconia materials are closely related to the different types of point defects which exist in zirconia crystals.These point defects are mainly in the form of oxygen vacancies.The research sample is zirconia doped ceria (ZDC).This kind of doping doesn't result the appearance of oxygen vacancy.But cerium is not a single valence element.It has two possible valences+4 and+3 which results the reducing or oxidizing of Ceria.The reducing and oxidizing of Ceria could result the dissociating of oxygen atom from internal crystal with the variation of oxygen partial pressure and temperature.The second type is hetero-valence doping.The research sample is Scandia stabilized Zirconia (ScSZ).The doping leads to the charge compensation which results the appearance of oxygen vacancy.The concentration of this kind of oxygen vacancy is a constant with the doping ratio of Scandia but not the function of oxygen partial pressure.
Key words:  zirconia  point defect  oxygen vacancy